TWO-DIMENSIONAL PEROVSKITE JUNCTION-LESS HETEROJUNCTION TUNNEL FIELD EFFECT TRANSISTOR

The present disclosure pertains to a two-dimensional perovskite junction-lessheterojunction tunnel field-effect transistor 100 having induced charge carriers.The junction-less transistor 100 includes a source region 108-1, a drain region108-3, and a channel region 108-2, where the channel region 108-2 can beconfigured to facilitate controlled flow of the charge carriers between the source10 region 108-1 and the drain region 108-3. The transistor 100 can be configuredfrom bis-(phenethyl ammonium)-methyl ammonium lead iodide(C6H5(CH2)2NH3)2(CH3NH3)n-1PbnI(3n+1)), where the source region 108-1, thedrain region 108-3, and the channel region 108-2 can be constituted from a firstset of layers having a first work function, and a second set of layers and a third set15 of layers having a second work function distinct from the first work function,thereby facilitating the flow of the charge carriers between the source region 108-1 and the drain region 108-3.

Inventors

PREETI SHARMA, RAJNISH SHARMA, JAYA MADAN, RAHUL PANDEY

Patent File Number - 202011038743        Patent File Date - 08/09/2020