Highly Linear Pseudo-Resistive Element

The present disclosure provides a pseudo-resistive element, which can provide a highly linear characteristic over a wide range of voltage. The pseudo-resistive element include one or more Metal Oxide Semiconductor transistors configured and coupled to each other in a pre-determined way. A biasing voltage is applied to facilitate operation of the pseudo-resistive
element. The pseudo-resistive element is capable of providing enhanced performance against Process Voltage and Temperature (PVT) variations.

Inventors

Kulbhushan Sharma, Rajnish Sharma

Patent File Number - 202011019705        Patent File Date - 09/05/2020