The present disclosure provides a pseudo-resistive element, which can provide a highlylinear characteristic over a wide range of voltage. The pseudo-resistive element includeone or more Metal Oxide Semiconductor transistors configured and coupled to each other in apre-determined way. A biasing voltage is applied to facilitate operation of the pseudo-resistiveelement. The pseudo-resistive element is capable of providing enhanced performanceagainst Process Voltage and Temperature (PVT) variations.
KULBHUSHAN SHARMA, RAJNISH SHARMA