The present disclosure pertains to a CZTSSe based solar cell (100). The solar cell(100) includes a tin sulphide (Sn2S3) layer(102) embedded as a Back Surface Field(BSF) for a CZTSSe layer (104), where the CZTSSe layer (104) is fabricatedabove the (Sn2S3) layer (102). The solar cell (100) includes a cadmium sulphide(CdS) layer (106) fabricated between the CZTSSe layer (104) and a zinc oxide(i-10 ZnO) layer (108), where the zinc oxide (i-ZnO) layer (108) is fabricated above theCdS layer (106). The solar cell (100) includes a zinc oxide (ZnO) layer (110)fabricated above the i-ZnO layer (108), where an interface of the CZTSSe layer(104) and the Sn2S3 layer (102) facilitates restricting flow of a set of electrons.The set of electrons are directed towards the CZTSSe layer (104), and where the15 Sn2S3 layer (102) facilitates increasing power conversion efficiency of the solarcell (100).
Inventors
Shivani, Jaya Madan, Rahul Pandey, Rajnish Sharma
